于永强
发布时间:2020-11-05    发布人:杨武    阅读次数:5475
姓 名:
于永强
职 称:
副教授
职 务:
 
所属系:
电子科学与技术
邮 箱:
yongqiangyu@hfut.edu.cn
电 话:
 

个人简介:

男,博士,加州大学洛杉矶分校访问学者。分别获东北大学学士,合肥工业大学硕士,博士,现任合肥工业大学电子科学与应用物理学院副教授,硕士生导师,安徽省微电子机械系统(MEMS)工程技术研究中心教师。从事微电子领域的教学和科研工作,近年来在Advanced Functional Materials, IEEE Electron Device Letters,Small, Advanced Science,Nano Research, Nanoscale, Sensors & Actuators: A. Physics,等国际重要SCI期刊论文几十余篇,研究结果被Materials views china亮点报道。现为IEEE Electron Device Letters, Sensors & Actuators: A. Physics,Nanoscale,ACS Applied Materials & Interfaces 等期刊审稿人。主持及参与国家自然科学基金,安徽省自然科学基金,中国博士后基金,校基金,委托合作项目等,获授权发明专利十多项。指导研究生多次获研究生国家奖学金,其中有赴清华大学攻读微电子领域博士学位。

研究方向:

二维半导体光电器件,MEMS传感器,红外探测器

开设课程:

本科生:《热力学与统计物理》,《半导体物理》,《薄膜物理与技术》,《器件与工艺课程设计》;
研究生:《光电子器件》

科研项目(在研):

1、脉冲功率激光技术国家重点实验室开放基金,微光窄带低维异质结红外探测器的研究,SKL 2019 KF09,2020-01至2021-12,15万,在研,主持
2、合作委托,基于MEMS技术的Tokamak磁体电源综合测量系统研发,W2018JSKF0534, 2018-11至2020-12,42.6万,在研,参加

代表成果(著作、论文、专利等,限10项):

1、1、Zhijian Lu, Yan Xu, Yongqiang Yu*, Kewei Xu, Jie Mao, Gaobin Xu, Yuanming Ma,Di Wu, and Jiansheng Jie*, Ultrahigh Speed and Broadband Few-Layer MoTe2/Si 2D–3D Heterojunction-Based Photodiodes Fabricated by Pulsed Laser Deposition, Advanced Functional Materials, 2020 30(9):1907951.
2、Chunxiao Wang, Yuan Dong, Zhijian Lu, Shirong Chen, Kewei Xu, Yuanming Ma, Gaobin Xu*, Xiaoyun Zhao, Yongqiang Yu*, High responsivity and high-speed 1.55 um infrared photodetector from self-powered graphene/Si heterojunction, Sensors and Actuators A: Physical, 2019, 291,87-92.
3、Jun Xu*, Xialan Cheng, Tong Liu, Yongqiang Yu*, Lingling Song, Yu You, Tao, Wang, Junjun Zhang*, Oxygen-incorporated and layer-by-layer stacked WS2 nanosheets for broadband, self-driven and fast-response photodetectors, Nanoscale, 2019, 11, 6810-6816.
4、Yongqiang Yu*, Zhi Li, Zhijian Lu, Xiangshun Geng, Yingchun Lu, Gaobin Xu, Li Wang, Jiansheng Jie*,Graphene/MoS2/Si nanowires Schottky-NP bipolar van der Waals heterojunction for ultrafast photodetectors, IEEE Electron Device Letters, 2018, 39(11): 1688-1691.
5、Yan Zhang, Yongqiang Yu*, Longfei Mi, Hui Wang, Zhifeng Zhu, Qingyun Wu, Yugang Zhang, Yang Jiang*, In-situ fabrication of vertical multilayer MoS2/Si homotype heterojunction for high-speed visible-near infrared photodetectors, Small, 2016, 12(8): 1062–1071.
6、Xiangshun Geng, Yongqiang Yu*, Xiaoli Zhou, Chunde Wang, Kewei Xu, Yang Zhang, Chunyan Wu, Li Wang, Yang Jiang, Qing Yang*, Design and construction of ultra-thin MoSe2 nanosheet-based heterojunction for high-speed and low-noise photodetection, Nano Rearch, 2016, 9(9): 2641-2651.
7、Yongqiang Yu, Longhui Zeng, Yang Jiang, Jiansheng Jie*, Ultralow contact resistivity of Cu/Au with p-type ZnS nanoribbons for nanoelectronics applications, IEEE Electron Device Letters, 2013, 34 (6): 810-812.
8、Jie Mao(#), Yongqiang Yu(#), Liu Wang, Xiujuan Zhang*, Yuming Wang, Zhibin Shao, Jiansheng Jie*, Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode, Advanced Science, 2016, 3.

授权发明专利:

1、于永强,李智,卢志坚,许克伟,耿祥顺,罗林保,吴春艳,一种外尔半金属异质结红外探测器及其制备方法,2019.04.25,中国,L201710883262.0
2、于永强,许克伟,耿祥顺,李智,罗林保,一种自驱动二维碲化钼同型异质结近红外光电探测器及其制备方法,2017.05.17,中国,ZL01610551522.X
3、于永强,耿祥顺,许克伟,罗林保,蒋阳,吴春艳,一种具有垂直生长结构的二维过渡金属硫属化物同质结光电探测器及其制备方法,2017.03.01,中国,ZL201610185922.
4、于永强,蒋阳,郑坤,王莉,吴春艳,朱志峰,一种高速纳米两端非易失性存储器及其制备方法,2016.10.26,中国,ZL201410066746.2


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