王燕
发布时间:2022-03-24    发布人:杨武   


姓 名:王燕

职 称:副教授/硕导/博导

职 务:

所属系:电子科学与技术系

邮 箱:yanw@hfut.edu.cn

电 话:

个人简介:

王燕,女,副教授,硕士生导师、博士生导师。2016年于中国科学技术大学获博士学位;曾以博士后/副研究员身份受聘于深圳大学微纳光电子学研究院,并任香港理工大学访问学者。20223月加入合肥工业大学微电子学院,聘为“黄山学者学术骨干”副教授。

研究长期聚焦 “器件-电路-系统”一体化的智能芯片与存储计算:以忆阻器与新型闪存为核心器件基础,通过建模与电路实现把器件能力转化为可验证、可部署的神经形态计算(ANN/CNN/SNN/RC)与视觉信号处理硬件方案,面向下一代低功耗边缘智能与类脑计算芯片。

迄今在电子学与材料学期刊发表SCI论文60余篇,SCI引用超过4900次,H因子35Google Scholar)。以第一/通讯作者在 Nature CommunicationsAdvanced MaterialsAdvanced Functional MaterialsChemical ReviewsNano Letters 等期刊发表高水平论文30余篇,其中7ESI 1%高被引论文;7篇入选 Advanced Materials2篇)等期刊封面或卷首论文;最高单篇SCI引用超过700次。以主编身份编著英文专著《Perovskite Quantum Dots: Synthesis, Properties and Applications》。主持国家自然科学基金面上项目(在研)、国家自然科学基金青年项目、广东省自然科学基金面上项目等。长期担任 Applied NanoscienceIEEE Transactions on Circuits and Systems I 等期刊审稿人,担任 Frontiers of PhysicsBrain-X 等期刊青年编委。

研究方向:

方向A|忆阻器/闪存的器件建模与电路级验证

1)忆阻器建模:多物理/等效电路/统计分布建模,面向阵列与计算精度评估

2)神经元与突触电路:LIF神经元、脉冲编码与STDP/在线学习电路框架(SPICE/Cadence

3)存内计算(CIM)与阵列级仿真:VMM误差来源、写入验证策略、阵列扰动与可靠性评估

方向B|忆阻器/闪存器件与神经形态架构的协同设计

1)忆阻器与闪存器件的制备与性能优化(一致性、能耗、可靠性)

2)器件特性与网络算法(ANN/CNN/SNN/RC)的适配

3)面向视觉任务的边缘计算:事件/时序信号处理、低功耗推理与在线更新

方向C|可演示、可落地的智能系统

1)基于神经形态电路/阵列的视觉系统:传感-存储-计算一体化

2)与嵌入式/小车平台结合:实现“可跑起来”的智能演示(从算法到电路到系统集成)

科研项目:

1.国家自然科学基金面上基金:基于近红外光控有机突触晶体管的机器视觉系统研究,2025-2028年度,主持。

2.合肥工业大学拔尖创新人才培养项目:多模神经形态器件及智能视觉信号处理,2025-2027年度,主持。(培养学生:23级本科生,代甲)

3.国家自然科学基金青年基金:基于量子点异质结的光电编程突触晶体管的研制,2022-2024年度,主持。
4.
广东省自然科学基金面上项目:钙钛矿量子点自组装异质结的光控阻变性能研究,2019-2022年度,主持。

招生与培养:

1.研究生招生

每年招收硕士生4人、博士生1–2人。欢迎电子信息、电子科学与技术、微电子科学与工程、集成电路与系统、自动化等专业背景同学加入。课题组研究以“器件-电路-系统”协同为主线:一方面持续开展忆阻器与新型闪存器件研究,另一方面重点推进器件建模、神经形态电路与存内计算(CIM)架构验证,让同学既能做科研,也能形成面向就业的工程能力。

我们特别欢迎以下类型同学:

1)偏设计/仿真/验证:数电模电基础扎实,愿意系统学习并使用SPICE/Cadence开展电路仿真,进行参数扫描、Corner/Monte Carlo分析,以及系统级验证与评估;

2)偏架构/算法-硬件协同:对存内计算、神经形态计算、边缘智能感兴趣,愿意从网络任务指标出发,建立硬件约束(能耗/延迟/精度/可靠性)并完成可复现评测;

3)偏器件/工艺/表征:希望深入器件制备与表征(忆阻器/闪存),并把器件特性与电路/架构需求闭环起来,做出智能系统展示。

在培养方式上,课题组强调科研与工程并重:同学既有机会产出高水平论文,也鼓励把成果做成可展示的电路/系统Demo。方向选择灵活,可以偏“电路/建模/架构”,也可以偏“器件/工艺/表征”,或两者交叉发展。

2.本科生大创与毕设

欢迎微电子学院集成电路与集成系统、微电子科学与工程、电子科学与技术等专业本科生加入课题组,参与忆阻器/闪存建模与仿真、LIF神经元电路、CIM阵列评估、智能视觉系统与小车演示等大创与毕业设计。课题支持发表高质量论文/专利。

平台与条件:

课题组经费充足、条件完善,具备从薄膜制备、器件加工到电学/光学表征与系统测试的完整链条;配备热蒸发、磁控溅射、ALD、手套箱联用蒸发、直写光刻、探针台与半导体参数分析等设备,以及示波器、矢量信号分析、激光共聚焦、XRDSEMAFM、光谱等表征平台,可充分保障器件研究与电路/系统验证的协同推进。

代表成果(著作、论文、专利等,限10项):

书籍编写

1. 外文书籍编写:Y. Zhou, Y. Wang,(主编)Perovskite Quantum Dots: Synthesis, Properties and Applications, Springer Nature Singapore Pte Ltd. 2020, ISBN978-981-15-6636-3.

2.外文书籍章节撰写:J. Chen, Z. Wang, Y. Wang,Y. Zhou, S.-T. Han, Perovskites for phototunable memories and neuromorphic computing, 外文书籍《Photo-Electroactive Nonvolatile Memories for Data Storage and Neuromorphic Computing》第12章节, Woodhead Publishing, 2020, 279-292.

发表论文

1. Y. Wang#, Y. Gong#, S. Huang, X. Xing, Z. Lv, J. Wang, J. Yang, Y. Zhou, S.-T. Han*, Memristor-based biomimetic compound eye for real-time collision detection, Nat. Common. 2021, 12, 5979. (cited by 127)

2Y. Wang*, X. Cheng, S. Chen, M. Liu, Z. Lv, X. Zhu, Q. Jia, C. Wu, L. Wang, X. Zhang, L.  Luo*, Sodium-enhanced perovskite reservoir for photonic in-sensor computing. Nano Energy, 2025, 138, 110830.

3. Y. Dai, X. Cheng, Y. Huang, Y. Wang*, L. Wang, Y. Yang, Y. Zhou, L. Luo, C. Wu*, Bipolar AlGaN Ultraviolet Photodetector for Neuromorphic Computing Applications, IEEE Sensors Journal, 2025, 25, 3.

4. Y. Wang, S. Chen, X. Cheng, W. Chen, Z. Xiong, Z. Lv, C. Wu, L. Wang, G. Zhang, X. Zhu, L. Luo*, S.-T. Han*, Neurotransmitter-Mediated Plasticity in 2D Perovskite Memristor for Reinforcement Learning, Adv. Funct. Mater. 2023, 2309807.

5. Y. Wang, Z. Lv, Q. Liao, H. Shan, J. Chen, Y. Zhou*, L. Zhou, X. Chen, V. A. L. Roy*, Z. Wang, Z. Xu, Y.-J. Zeng, S.-T. Han*, Synergies of electrochemical metallization and valance change in all-inorganic perovskite quantum dots for resistive switching, Adv. Mater. 2018, 30, 1800327. (cited by 357)

6. Y. Wang, Z. Lv, J. Chen, Z. Wang, Y. Zhou*, L. Zhou, X. Chen, S.-T. Han*, Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing, Adv. Mater. 2018, 30, 1802883. (cited by 700)

7. Y. Wang#, Y. Gong#, L. Yang, Z. Xiong, Z. Lv, X. Xing, Y. Zhou, B. Zhang, C. Su, Q. Liao, S.-T. Han*, MXene-ZnO Memristor for Multimodal In-Sensor Computing, Adv. Funct. Mater. 2021, 2100144. (cited by 234)

8. Z. Lv#, Y. Wang#, J. Chen, J. Wang, Y. Zhou*, S.-T. Han*, Semiconductor quantum dots for memories and neuromorphic computing systems, Chem. Rev. 2020, 120, 9, 3941. (cited by 353)

9. Z. Wang#, Y. Wang#, J. Yu, J. Yang, Y. Zhou*, J. Mao, R. Wang, X. Zhao, W. Zheng S.-T. Han*, Type-I core–shell ZnSe/ZnS quantum dot-based resistive switching for implementing algorithm. Nano Lett., 2020, 20, 5562.

10. Y. Wang, Q. Liao, D. She, Z. Lv, Y. Gong, G. Ding, W. Ye, J. Chen, Z. Xiong, G. Wang, Y. Zhou*, S.-T. Han*, Modulation of binary neuroplasticity in a heterojunction-based ambipolar transistor, ACS Appl. Mater. Inter. 2020, 12, 15370.

11. Y. Xing, J. Yang, G. Zou, C. Fu, Y. Pan, Y. Xiao, J. Wang, Y. Wang*, L. Luo*, Sensitive and broadband wavelength sensor based on two graphene/Si/graphene heterojunctions. Adv. Opt. Mater. 2023, 2300407.

12. Y. Gong#, Y. Wang#, R. Li, J. Yang, Z. Lv, X. Xing, Q. Liao, J. Wang, J. Chen, Y. Zhou*, S.-T. Han*, Tailoring synaptic plasticity in a perovskite QD-based asymmetric memristor. J. Mater. Chem. C, 2020, 8, 2985.

13. Y. Wang, J. Yang, Z. Wang, J. Chen, Q. Yang*, Z. Lv, Y. Zhou*, Y. Zhai, Z. Li, S.-T. Han*, Near-infrared annihilation of conductive filaments in quasiplane MoSe2/Bi2Se3 nanosheets for mimicking heterosynaptic plasticity, Small, 2019, 15, 1805431.

14. Y. Wang, J. Yang, W. Ye, D. She, J. Chen, Z. Lv, V. A. L. Roy*, H. Li, K. Zhou, Q. Yang, Y. Zhou*, S.-T. Han*, Near-infrared-irradiation-mediated synaptic behavior from tunable charge-trapping dynamics, Adv. Electron. Mater.,2019, 1900765

15. Y. Wang, Z. Lv, L. Zhou, X. Chen, J. Chen, Y. Zhou*, V. A. L. Roy*, S. -T. Han*, Emerging perovksite materials towards high density data storage and artificial synapse, J. Mater. Chem. C, 2018, 6, 1600-1617.

16. Y. Wang, Y. Ren, J. Luo, Q. Hao, B. Li, Z. Gao, Y. Hu, D. Lin, K. Tang*, Preparation of ultrathin perovskite nanosheets by the exfoliation of H2CaTa2O7 for high-performance lead removal from water, RSC Adv., 2016, 6, 113671.

17. Y. Wang, Q. Hao, X. Li, B. Li, J. Luo, Y. Hu, K. Tang*, Preparation of a Li+ intercalated organic derivative of the Ruddlesden-Popper phase H2CaTa2O7, J. Alloy. Compd., 2015, 645, 24.

18. Y. Wang, X. B. Zhu, X. N. Li, L. L. Wang, Y. K. Wang, Q. Y. Hao, K. Tang*, D-Glucopyranose-modified compound of Ruddlesden-Popper phases H2CaTa2O7: characterization and intercalation with Ag, J. Mater. Chem. A, 2014, 2, 15590-15597.

19. Y. Wang, C. Wang, L. Wang, Q. Hao, X. Zhu, X. Chen, K. Tang*, Preparation of interlayer surface tailored protonated double-layered perovskite H2CaTa2O7 with n-alcohols, and their photocatalytic activity, RSC Adv., 2014, 4, 4047.

20. Z. Gao, Y. Wang, Z. Lv, P. Xie, Z. Xu, M. Luo, Y. Zhang, S. Huang, K. Zhou, G. Zhang, G. Duan, Y. Zhou, S.-T. Han*, Ferroelectric coupling for dual-mode non-filamentary memristors. App. Phys. Rev. 2022, 9, 021417.

21. G. Zhang, Z. Xiong,Y. Gong, Z. Zhu, Z. Lv, Y. Wang, J. Yang, X. Xing, Z. Wang, J. Qin, Y. Zhou, S.-T. Han*,  Polyoxometalate accelerated cationic migration for reservoir computing. Adv. Funct. Mater.  2022, 32, 2204721.

22. G. Liu, Z. Lv, S. Batool, M. Li, P. Zhao, L. Guo, Y. Wang, Y. Zhou, S.-T. Han*, Biocompatible materialbased flexible biosensors: from materials design to wearable/implantable devices and integrated sensing systems. Small 2023, 2207879.

23. Y. Gong, X. Xing, Z. Lv, J. Chen, P. Xie, Y. Wang, S. Huang, Y. Zhou, S.-T. Han*, Ultrasensitive flexible memory phototransistor with detectivity of 1.8× 1013 Jones for artificial visual nociceptor. Adv. Intell. Sys. 2022, 4, 2100257.

24. Z. Lv, X. Xing, S. Huang, Y. Wang, Z. Chen, Y. Gong, Y. Zhou, S.-T. Han*, Self-assembling crystalline peptide microrod for neuromorphic function implementation, Matter. 2021, 4, 1-18.

25. X. Liu, J. Chen, Y. Wang, S.-T. Han*, Y. Zhou*, Building functional memories and logic circuits with 2D boron nitride, Adv. Funct. Mater. 2021, 31, 2004733.

26. Y. Gong, X. Xing, Y. Wang, Z. Lv, Y. Zhou, S.-T. Han*, Emerging MXenes for functional memories, Small. Sci. 2021, 1, 2100006.

27. Q. Liao,Y. Wang,Z. Lv, Z. Xiong,J. Chen, G. Wang, S.-T. Han, Y. Zhou*, Electronic synapses mimicked in bilayer organic-inorganic heterojunction based memristor, Org. Electron. 2021, 90, 106062.

28. J. Wang, F. Qian,S. Huang, Z. Lv, Y. Wang,X. Xing, M. Chen, S.-T. Han*, Y. Zhou*, Recent Progress of Protein-Based Data Storage and Neuromorphic Devices, Advanced intelligent systems, 2021, 3, 2000180.

29. M. Chen, Z. Lv, F. Qian, Y. Wang,X. Xing, K. Zhou, J. Wangb, S. Huang, S.-T. Han, Y. Zhou*, Phototunable memories and reconfigurable logic applications based on natural melanin, J. Mater. Chem. C 2021, 9, 3569-3577.

30. J. Wang, Z. Lv, X. Xing, X. Li, Y. Wang, M. Chen, G. Pang, F. Qian, Y. Zhou, S.-T. Han*, Optically modulated threshold switching in core–shell quantum dot based memristive device, Adv. Funct. Mater. 2020, 30, 1909114.

31. Z. Lv, Q. Hu, Z.-X. Xu,* J. Wang, Z. Chen, Y. Wang, M. Chen, K. Zhou, Y. Zhou*, S.-T. Han*, Organic memristor utilizing copper phthalocyanine nanowires with infrared response and cation regulating properties, Adv. Electron. Mater. 2019, 5, 1800793.

32. X. Chen, P. Huang, X. Zhu, S. Zhuang, H. Zhu, J. Fu, A. S. Nissimagoudar, W. Li, X. Zhang, L. Zhou, Y. Wang, Z. Lv, Y. Zhou*, S.-T. Han*, Keggin-type polyoxometalate cluster as an active component for redox-based nonvolatile memory, Nanoscale Horiz., 2019, 4, 697.

33. Z. Lv, M. Chen, F. Qian, V. A. L. Roy*, W. Ye, D. She, Y. Wang, Z.-X. Xu, Y. Zhou* and S.-T. Han,* Mimicking Neuroplasticity in a Hybrid Biopolymer Transistor by Dual Modes ModulationAdv. Funct. Mater. 2019, 29, 1902374.

34. Z. Wang, S. Zhang, L. Zhou, J. Mao, S. -T. Han, Y. Ren, J. Yang, Y. Wang, Y. Zhai, Y. Zhou, Functional non-volatile memory devices: from fundamentals to photo-tunable properties, Phy. Status Solidi-R., 2019, 13, 1800644.

35. Z. Lv, Y. Wang, Z. Chen, L. Sun, J. Wang, M. Chen, Z. Xu, Q. Liao, L. Zhou, X. Chen, J. Li, K. Zhou, Y. Zhou*, Y.-J. Zeng, S.-T. Han* and V. A. L. Roy*, Photo-tunable biomemory based on light-mediated charge trapAdv. Sci. 2018, 5, 1800714.

36. L. Hu, J. Yuan, Y. Ren, Y. Wang, J. Yang, Y. Zhou, Y.-J. Zeng*, S.-T. Han*, S. Ruan*, Broadband phosphorene-based nano heterojunctions for photonic non-volatile memory applicationAdv. Mater. 2018, 30, 1801232.

37. Y. Zhai, X. Yang, F. Wang,* Z. Li, G. Ding, Z. Qiu, Y. Wang, Y. Zhou*, S.-T. Han*, Infrared-sensitive memory based on direct-grown MoS2-upconversion nanoparticle heterostructureAdv. Mater. 2018, 1803563.

38. X. Chen, J. Pan, J. Fu, X. Zhu, C. Zhang, L. Zhou, Y. Wang, Z. Lv, Y. Zhou*, S.-T. Han*, Polyoxometalates-modulated reduced graphene oxide flash memory with ambipolar trapping as bidirectional artificial synapse, Adv. Electron. Mater., 2018, 4, 1800444.

39. L. Zhou, J.-Y. Mao, Y. Ren, J.-Q. Yang, S.-R. Zhang, Y. Zhou*, Q. Liao, Y.-J. Zeng, H. Shan, Z. Xu, J. Fu, Y. Wang, X. Chen, Z. Lv, S.-T. Han*, V. A. L. Roy, Biological spiking synapse constructed from solution processed bimetal core–shell nanoparticle based composites, Small, 2018, 14, 1800288.

40. Y. Hu, Q. Hao, B. Zhu, B. Li, Z. Gao, Y. Wang, K. Tang*, Toward Exploring the Structure of Monolayer to Few-layer TaS2 by Efficient Ultrasound-free Exfoliation, Nanoscale research letters, 2018, 13, 20.

41. J. Guo, L. Shi, J. Zhao, Y. Wang, K. Tang*, W. Zhang, C. Xie, X. Yuan, Enhanced visible-light photocatalytic activity of Bi2MoO6 nanoplates with heterogeneous Bi2MoO6-x@ Bi2MoO6 core-shell structure, Applied Catalysis B: Environmental, 2018, 224, 692.

42. Q. Hao, D. Wang, B. Zhu, S. Zeng, Z. Gao, Y. Wang, B. Li, Y. Wang, Z. Tang, K. Tang*, Facile synthesis, structure and physical properties of 3R-AxNbS2 (A=Li, Na), J. Alloy Compd. 2016, 663, 225.

43. X. Chen, K. Tang*, S. Zeng, Q. Hao, D. Wang, Z. Gao, Y. Wang, Fluorination of La2-xSrxCuO4 (x = 0, 0.15, 0.3) and study on the crystal structures, magnetic properties of their fluorinated products, J. Alloy Compd. 2015, 626, 239.

44. B. Li, D. Wang, Y. Wang, B. Zhu, Z. Gao, Q. Hao, Y. K. Wang, K. Tang*, One-Step synthesis of hexagonal TiOF2 as high rate electrode material for lithium-ion batteries: research on Li intercalation/de-intercalation mechanism, Electrochim. Acta 2015, 180, 894.  

45. B. Li, Z. Gao, D. Wang, Q. Hao, Y. Wang, Y. K. Wang, K. Tang*, One-step synthesis of titanium oxyhydroxy-fluoride rods and research on the electrochemical performance for lithium-ion batteries and sodium-ion batteries, Nanoscale Res. Lett. 2015, 10, 409.   

46. X. Li, J. Liang, Z. Hou, Y. Zhu, Y. Wang, Y. Qian*, A synchronous approach for facile production of Ge–carbon hybrid nanoparticles for high-performance lithium batteries, Chem. Commun. 2015, 51, 3882.

47. X. Li, J. Liang, Z. Hou, Y. Zhu, Y. Wang, Y. Qian*, Coordination complex pyrolyzation for the synthesis of nanostructured GeO2 with high lithium storage properties, Chem. Commun. 2014, 50, 13956.

48.X. Li, X. Zhu, J. Liang, Z. Hou, Y. Wang, N. Lin, Y. Zhu, Y. Qian*, Graphene-Supported NaTi2(PO4)3 as a High Rate Anode Material for Aqueous Sodium Ion Batteries, J. Electrochem. Soc. 2014, 161, A1181.

49. X. Zhu, X. Li, Y. Zhu, S. Jin, Y. Wang, Y. Qian*, Porous LiNi0.5Mn1.5O4 microspheres with different pore conditions: Preparation and application as cathode materials for lithium-ion batteries, Journal of Power Sources 2014, 261, 93e100.

50. X. Zhu, X. Li, Y. Zhu, S. Jin, Y. Wang, Y. Qian*, LiNi0.5Mn1.5O4 nanostructures with two-phase intergrowth as enhanced cathodes for lithium-ion batteries, Electrochim. Acta 2014, 121, 253.

51. C. Wang, K. Tang*, L. Wang, Q. Hao, Y. Wang, A topotactic synthetic methodology to mesoporous compound HLaNb2O7, Mater. Lett. 2013, 108, 264.

52. Q. Hao, B. Zhu, D. Wang, S. Zeng, Z. Gao, Y. Hu, Y. Wang, Y. K. Wang, K. Tang*, A new potassium intercalation compound of 3R-Nb1.1S2 and its superconducting hydrated derivative synthesized via soft chemistry strategy, ChemistrySelect. 2016, 1, 2610.

授权专利

(1) 王燕; 韩素婷; 周晔; 陈锦锐; 王展鹏; 一种光控神经突触仿生电子器件及其制备方法, 2020-12-5, 中国, ZL201810758762.6 (授权专利)

(2) 王燕;吕子玉; 程厚义; 汪建; 赵巍胜; 一种具有三端电极结构的稳健型光电忆阻器, 2021-12-17, 中国, ZL202121236457.4 (授权专利)

(3) 王燕; 吕子玉; 吴鹏; 许涌; 赵巍胜; 一种多场调控忆阻器及其制备方法, 2022-11-01, 中国, ZL202110120943.8 (授权专利)

(4) 王燕; 吕子玉; 洪宾; 吴鹏; 赵巍胜; 一种水平结构的忆阻器及均一性优化方法, 2022-09-02, 中 国, ZL202110155752.5 (授权专利)

(5) 王燕; 吕子玉; 程厚义; 张悦; 赵巍胜; 一种由自组装异质结材料作为存储介质层构建的忆阻器及其制备方法, 2022-11-01, 中国, ZL202110608381.1 (授权专利)

(6) 王燕; 吕子玉; 程厚义; 杜寅昌; 赵巍胜; 一种具有非单调变化电阻态的忆阻器在碰撞预测中的应用, 2022-06-01, 中国, ZL202110609349.5 (授权专利)

(7) 周晔; 韩素婷; 王展鹏;王燕; 陈锦锐; 一种多级阻变存储器及制备方法, 2019-9-24, 中国, ZL201810786319.X (授权专利)

(8)周晔; 王燕; 韩素婷; 廖秋凡; 吕子玉; 周黎 ; 一种双极性薄膜晶体管及其制备方法, 2023-11-14,中国, ZL202010166484.2 (授权专利)

个人(实验室)主页:

http://optoele.hfut.edu.cn/

Google Scholar:   https://scholar.google.com/citations?hl=zh-CN&user=EchOizkAAAAJ 




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